GAS-SOURCE MOLECULAR-BEAM EPITAXY-GROWN INGAASP INGAALAS MULTIQUANTUM-WELL STRUCTURES WITH WIDE-RANGE CONTINUUM BAND-OFFSET CONTROL/

We report the first epitaxial growth results of InGaAsP/InGaAlAs multi -quantum well (MQW) structures grown by gas source molecular beam epit axy (GSMBE). This MQW system covers a wide range of band-offset, from type I to type II MQWs, and can be a key material for band engineering applications. We found that the surface structure control during epit axial growth, especially for the InGaAsP layer, was essential for obta ining highly crystalline InGaAsP/InGaAlAs MQWs. As an evidence of a ty pe II InP/InAlAs MQW structure, a distinctive electric field effect wi th increasing photo absorption and band-edge blue shift was clearly de monstrated.