K. Makita et al., GAS-SOURCE MOLECULAR-BEAM EPITAXY-GROWN INGAASP INGAALAS MULTIQUANTUM-WELL STRUCTURES WITH WIDE-RANGE CONTINUUM BAND-OFFSET CONTROL/, Journal of crystal growth, 150(1-4), 1995, pp. 579-584
We report the first epitaxial growth results of InGaAsP/InGaAlAs multi
-quantum well (MQW) structures grown by gas source molecular beam epit
axy (GSMBE). This MQW system covers a wide range of band-offset, from
type I to type II MQWs, and can be a key material for band engineering
applications. We found that the surface structure control during epit
axial growth, especially for the InGaAsP layer, was essential for obta
ining highly crystalline InGaAsP/InGaAlAs MQWs. As an evidence of a ty
pe II InP/InAlAs MQW structure, a distinctive electric field effect wi
th increasing photo absorption and band-edge blue shift was clearly de
monstrated.