SUPPRESSION OF THREADING DISLOCATION GENERATION IN GAAS-ON-SI WITH STRAINED SHORT-PERIOD SUPERLATTICES

We investigated the suppression of threading dislocation generation in GaAs-on-Si(100) with strained short-period superlattices by reflectio n high-energy electron diffraction and transmission electron microscop y. A two-dimensional growth mode was kept during the lattice relaxatio n process. As a result, the density of threading dislocations in the G aAs epilayer was markedly reduced. A lattice mismatch of 4% was accomm odated at hetero-interfaces by generating misfit dislocations in the d irections of [011].