RELAXATION OF INTERFACIAL STRESS AND IMPROVED QUALITY OF HETEROEPITAXIAL 3C-SIC FILMS ON (100)SI DEPOSITED BY ORGANOMETALLIC CHEMICAL-VAPOR-DEPOSITION AT 1200-DEGREES-C

We were able to significantly improve the quality of the heteroepitaxi al films of the cubic modification of silicon carbide, 3C-SiC, by the use of organosilicon precursors and a careful control of the initial s tage of the growth. The films were prepared by chemical vapor depositi on from an organometallic precursor, methyltrichlorosilane. It is show n that the interfacial stress, which originates from the large lattice mismatch between the silicon substrate and the SiC film, efficiently relaxes with increasing distance between the interface yielding thick films of high quality for a thickness of greater than or equal to 20 m u m. (C) 1997 American Vacuum Society.