SI(110)2X3-SB SURFACE STUDIED WITH ANGLE-RESOLVED PHOTOEMISSION

Angle-resolved ultraviolet photoelectron spectroscopy has been used to study the electronic structure of a Si(110)2x3-Sb surface. The surfac e shows a semiconducting behavior with the highest occupied surface-st ate band observed around 1.8 eV below the Fermi level (E(F)). A second state is observed at Gamma at 2.2 eV below E(F) dispersing >2.0 eV to wards higher binding energies along the [(1) over bar 10] and [(1) ove r bar 11] directions. A third state is observed along the [(1) over ba r 11] direction around the M point. Surface differential reflectivity experiments showed no optical transitions up to an energy of 3.5 eV, i ndicating that the minimum energy position of the lowest empty band mu st be at least 1.8 eV above E(F). (C) 1997 American Vacuum Society.