Jh. Jean et Tk. Gupta, EFFECT OF GALLIUM OXIDE ON CRYSTALLIZATION AND THERMAL-EXPANSION BEHAVIOR OF LOW-K GLASS COMPOSITE, IEEE transactions on components, packaging, and manufacturing technology. Part A, 18(2), 1995, pp. 438-443
Cristobalite is formed when borosilicate glass (Corning Code 7740) is
sintered at temperatures ranging from 700 degrees C to 1000 degrees C.
With added gallium oxide content greater than a critical value, the c
ristobalite formation in the borosilicate glass is completely prevente
d at the sintering temperatures investigated, and the critical gallium
oxide content increases with decreasing sintering temperature. The ab
ove result, similar to that observed in Al2O3/borosilicate glass syste
m, is attributed to a strong coupling between Ga+3 from Ga2O3 and Nafrom borosilicate glass. The observed coupling reaction causes segrega
tion of Na+ in borosilicate glass to gallium oxide, thus forming a Na and Ga+3-rich reaction layer around gallium oxide particles at a rate
which prevents formation of cristobalite.