EVOLUTION OF DISLOCATION LOOPS IN SILICON IN AN INERT AMBIENT .2.

A plan-view TEM study of the distribution, geometry and time-dependent anneal behavior of type-II dislocation loops induced by 1 x 10(15)/cm (2), 50 keV Si+ implantation into silicon was presented in Part I of t his paper. A point-defect based model representing loop-to-loop intera ctions (Ostwald-ripening) during annealing is developed. The variation in the size and distribution of the loops as a function of anneal tim e and temperature is correctly simulated as part of this modeling exer cise. Other quantities of interest, such as the average radii of the l oop distribution are extracted from the model and directly compared wi th experimental values.