ION-BEAM SHADOWING EFFECT IN SUBMICROMETER LARGE-ANGLE-TILT IMPLANTEDDRAIN (LATID) MOSFETS

Authors
CHEN HS TENG CS MOBERLY L LAHRI R
Citation
Hs. Chen et al., ION-BEAM SHADOWING EFFECT IN SUBMICROMETER LARGE-ANGLE-TILT IMPLANTEDDRAIN (LATID) MOSFETS, Solid-state electronics, 38(7), 1995, pp. 1321-1323
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied","Physics, Condensed Matter
Journal title
Solid-state electronics → ACNP
ISSN journal
00381101
Volume
38
Issue
7
Year of publication
1995
Pages
1321 - 1323
Database
ISI
SICI code
0038-1101(1995)38:7<1321:ISEISL>2.0.ZU;2-6
Abstract
An orientation-dependent device characteristic in LATID MOSFETs is rep orted. By controlled device fabrication splits, it is confirmed that t he orientation-dependent device characteristics are caused by the larg e-angle-tilt (LAT) implant which creates n(-) drain regions with diffe rent lengths and doping concentrations due to poly gate shadowing effe ct. These differences in n(-) region cause transistor performance and reliability, such as saturation current and hot-carrier injection, to vary significantly with respect to transistor orientation.