An orientation-dependent device characteristic in LATID MOSFETs is rep
orted. By controlled device fabrication splits, it is confirmed that t
he orientation-dependent device characteristics are caused by the larg
e-angle-tilt (LAT) implant which creates n(-) drain regions with diffe
rent lengths and doping concentrations due to poly gate shadowing effe
ct. These differences in n(-) region cause transistor performance and
reliability, such as saturation current and hot-carrier injection, to
vary significantly with respect to transistor orientation.