Mj. Uren et al., FAST AND SLOW INTERFACE STATE DISTRIBUTIONS ON (100)SI-SIO2 AND (111)SI-SIO2 SURFACES FOLLOWING NEGATIVE BIAS STRESS, Microelectronic engineering, 28(1-4), 1995, pp. 11-14
The distribution of fast and slow interface states through the silicon
bandgap has been measured for the (100) and (111) Si:SiO2 surfaces. T
he measurements were carried out before and after damage to the interf
ace using negative bias stress. The results show that both fast and sl
ow states are more easily created on the (111) surface. The shape of t
he distribution through the gap is similar for both surfaces with the
slow state density rising strongly towards the conduction band edge.