ANOMALOUS POSITIVE CHARGE FORMATION BY ATOMIC-HYDROGEN EXPOSURE

Authors
STAHLBUSH RE CARTIER E BUCHANAN DA
Citation
Re. Stahlbush et al., ANOMALOUS POSITIVE CHARGE FORMATION BY ATOMIC-HYDROGEN EXPOSURE, Microelectronic engineering, 28(1-4), 1995, pp. 15-18
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
28
Issue
1-4
Year of publication
1995
Pages
15 - 18
Database
ISI
SICI code
0167-9317(1995)28:1-4<15:APCFBA>2.0.ZU;2-I
Abstract
The formation of anomalous positive charge (APC) near the Si/SiO2 inte rface by atomic hydrogen exposure at room temperature has been studied . The APC exhibits a range of charging/discharging times from fraction s of a second to hours. Room temperature annealing of the APC is obser ved and cycling its charge state makes the annealing significantly mor e rapid. The charge state of APC is driven by the silicon surface pote ntial but not by the oxide field.