DISSOCIATION KINETICS OF HYDROGEN-PASSIVATED (100)SI SIO2 INTERFACE DEFECTS/

Authors
STATHIS JH
Citation
Jh. Stathis, DISSOCIATION KINETICS OF HYDROGEN-PASSIVATED (100)SI SIO2 INTERFACE DEFECTS/, Microelectronic engineering, 28(1-4), 1995, pp. 19-21
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
28
Issue
1-4
Year of publication
1995
Pages
19 - 21
Database
ISI
SICI code
0167-9317(1995)28:1-4<19:DKOH(S>2.0.ZU;2-3