IDENTIFICATION OF DEFECTS IN SIO2 THERMALLY GROWN ON CZOCHRALSKI SI

Authors
ITSUMI M TOMITA M YAMAWAKI M
Citation
M. Itsumi et al., IDENTIFICATION OF DEFECTS IN SIO2 THERMALLY GROWN ON CZOCHRALSKI SI, Microelectronic engineering, 28(1-4), 1995, pp. 39-42
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
28
Issue
1-4
Year of publication
1995
Pages
39 - 42
Database
ISI
SICI code
0167-9317(1995)28:1-4<39:IODIST>2.0.ZU;2-U