RADIATION-INDUCED ELECTRON AND HOLE TRAPS IN THERMAL SIO2

Authors
AFANASEV VV DENIJS JMM STESMANS A BALK P
Citation
Vv. Afanasev et al., RADIATION-INDUCED ELECTRON AND HOLE TRAPS IN THERMAL SIO2, Microelectronic engineering, 28(1-4), 1995, pp. 43-46
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
28
Issue
1-4
Year of publication
1995
Pages
43 - 46
Database
ISI
SICI code
0167-9317(1995)28:1-4<43:REAHTI>2.0.ZU;2-I
Abstract
The degradation of the thermal oxide of a Si/SiO2/Al system caused by exposure to extremely large doses of vacuum ultraviolet irradiation (1 0eV) was studied from the trapping of injected electrons and holes, an d by means of electron spin resonance spectroscopy. The data show that O atoms from regular oxide network sites are decorated with H and sub sequently removed in the form of H2O molecules.