DEFECT CENTERS IN CHEMICAL-MECHANICAL POLISHED MOS OXIDES

Authors
SHANEYFELT MR WARREN WL HETHERINGTON DL TIMON RP RESNICK PJ WINOKUR PS
Citation
Mr. Shaneyfelt et al., DEFECT CENTERS IN CHEMICAL-MECHANICAL POLISHED MOS OXIDES, Microelectronic engineering, 28(1-4), 1995, pp. 71-74
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
28
Issue
1-4
Year of publication
1995
Pages
71 - 74
Database
ISI
SICI code
0167-9317(1995)28:1-4<71:DCICPM>2.0.ZU;2-U
Abstract
Defect centers generated in vacuum-ultraviolet irradiated chemical-mec hanical polished oxides have been characterized using electron paramag netic resonance and C-V analysis. Both oxide trap E(gamma)', and inter face trap P-b0 centers were detected in unpolished and polished oxides . In addition, another interface defect center known as the P-b1 cente r was only identified in the polished oxides, suggesting that the poli shing process altered the SiO2/Si interface.