Defect centers generated in vacuum-ultraviolet irradiated chemical-mec
hanical polished oxides have been characterized using electron paramag
netic resonance and C-V analysis. Both oxide trap E(gamma)', and inter
face trap P-b0 centers were detected in unpolished and polished oxides
. In addition, another interface defect center known as the P-b1 cente
r was only identified in the polished oxides, suggesting that the poli
shing process altered the SiO2/Si interface.