ORIGIN OF MACROSCOPIC EFFECTS ON HARDENED MOSFET DEVICES FOLLOWING LOW-TEMPERATURE (90 K) IONIZING IRRADIATION

Citation
N. Fourches et al., ORIGIN OF MACROSCOPIC EFFECTS ON HARDENED MOSFET DEVICES FOLLOWING LOW-TEMPERATURE (90 K) IONIZING IRRADIATION, Microelectronic engineering, 28(1-4), 1995, pp. 75-78
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
ISSN journal
01679317
Volume
28
Issue
1-4
Year of publication
1995
Pages
75 - 78
Database
ISI
SICI code
0167-9317(1995)28:1-4<75:OOMEOH>2.0.ZU;2-M
Abstract
Macroscopic effects are observed on MOS transistors after low temperat ure ionizing irradiation:the dose dependence of the threshold voltage shift and significantly a novel dose rate dependence. The microscopic origin of these effects is thorougly discussed. A quantitative modelin g of the experimental results is made and we find that the subsequent formulation allows a determination of the hole stochastic transport pa rameter alpha in the gate oxide. The threshold voltage shift as a func tion of dose rate can then be predicted.