N. Fourches et al., ORIGIN OF MACROSCOPIC EFFECTS ON HARDENED MOSFET DEVICES FOLLOWING LOW-TEMPERATURE (90 K) IONIZING IRRADIATION, Microelectronic engineering, 28(1-4), 1995, pp. 75-78
Macroscopic effects are observed on MOS transistors after low temperat
ure ionizing irradiation:the dose dependence of the threshold voltage
shift and significantly a novel dose rate dependence. The microscopic
origin of these effects is thorougly discussed. A quantitative modelin
g of the experimental results is made and we find that the subsequent
formulation allows a determination of the hole stochastic transport pa
rameter alpha in the gate oxide. The threshold voltage shift as a func
tion of dose rate can then be predicted.