RECENT DEVELOPMENTS IN ULTRA-THIN OXYNITRIDE GATE DIELECTRICS

Authors
HAN LK BHAT M WRISTERS D WANG HH KWONG DL
Citation
Lk. Han et al., RECENT DEVELOPMENTS IN ULTRA-THIN OXYNITRIDE GATE DIELECTRICS, Microelectronic engineering, 28(1-4), 1995, pp. 89-96
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
28
Issue
1-4
Year of publication
1995
Pages
89 - 96
Database
ISI
SICI code
0167-9317(1995)28:1-4<89:RDIUOG>2.0.ZU;2-4
Abstract
This paper reviews recent developments in N2O- and NO-based oxynitride gate dielectrics for CMOS ULSI applications. These dielectrics are ex tremely attractive due to their process simplicity, thickness controll ability, and excellent electrical characteristics. In this paper, seve ral issues like thickness scaling, growth kinetics, chemical compositi on, electrical properties, hot-carrier reliability, and EEPROM applica tions of these dielectrics are discussed.