OFF-STATE LEAKAGE CURRENT IN N-CHANNEL MOSFETS WITH GATE DIELECTRICS PREPARED BY DIFFERENT TECHNIQUES

Authors
XU Z LAI PT NG WT
Citation
Z. Xu et al., OFF-STATE LEAKAGE CURRENT IN N-CHANNEL MOSFETS WITH GATE DIELECTRICS PREPARED BY DIFFERENT TECHNIQUES, Microelectronic engineering, 28(1-4), 1995, pp. 97-100
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
28
Issue
1-4
Year of publication
1995
Pages
97 - 100
Database
ISI
SICI code
0167-9317(1995)28:1-4<97:OLCINM>2.0.ZU;2-7