COMPARISON OF ULTRA-THIN GATE DIELECTRICS FOR 0.1 MU-M MOS DEVICES

Authors
BENISTANT F MONDON F MARTIN F GUEGAN G
Citation
F. Benistant et al., COMPARISON OF ULTRA-THIN GATE DIELECTRICS FOR 0.1 MU-M MOS DEVICES, Microelectronic engineering, 28(1-4), 1995, pp. 105-108
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
28
Issue
1-4
Year of publication
1995
Pages
105 - 108
Database
ISI
SICI code
0167-9317(1995)28:1-4<105:COUGDF>2.0.ZU;2-Y
Abstract
This paper compares thermally grown gate oxide to deposited and nitrid ed thermal gate oxides (ONO - NO) designed for 0.1 mu m channel length MOS devices. The measured thickness is about 4.5 nm. These layers sho w high breakdown fields and very low tunnel currents. These very good electrical characteristics make them suitable gate dielectrics for fut ure 0.1 mu m devices.