GROWTH-KINETICS AND ELECTRICAL CHARACTERISTICS OF ULTRA-THIN PYROGENIC SILICON-OXIDE

Ultra-thin (3 to 6.5 nm) SiO2 layers are grown on ultra-clean Si surfa ces by thermal oxidation in steam at low temperatures (650-700 degrees C). The growth characteristics in the ultra-thin oxide thickness regi on are examined and it is shown that uniform oxide layers can be grown reproducible. It is demonstrated that these pyrogenic SiO2 layers gro wn on ultra-clean Si surfaces have a high yield and a reliability that is at least comparable with those of dry oxides.