NITROGEN ACCUMULATION AT THERMALLY GROWN OR OXIDE ON SILICON BY N2O-OXIDATION OR NO-OXIDATION CHEMICAL-VAPOR-DEPOSITED

At first we report an intended effect of accelerated nitrogen accumula tion at the CVD preoxide interface by N2O oxidation at 800 degrees C a nd below, compared with thermally grown preoxide in dry O-2 of the sam e thickness, leading to very light nitridation with a peak concentrati on N-peak of up to 1 at%. At second we demonstrate the light nitridati on with a higher N-peak of 4.5 at% and more at temperatures down to 60 0 degrees C by means of NO-oxidation of Si covered with a CVD oxide. E lectrical properties are compared with those of a dry O-2-RTO preoxide .