SILICON SIO2 INTERFACE FORMATION BY REMOTE PLASMA-ENHANCED OXIDATION/DEPOSITION PROCESS IN A CLUSTER TOOL/

Authors
PARKER CG SILVESTRE CL HAUSER JR
Citation
Cg. Parker et al., SILICON SIO2 INTERFACE FORMATION BY REMOTE PLASMA-ENHANCED OXIDATION/DEPOSITION PROCESS IN A CLUSTER TOOL/, Microelectronic engineering, 28(1-4), 1995, pp. 137-140
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
28
Issue
1-4
Year of publication
1995
Pages
137 - 140
Database
ISI
SICI code
0167-9317(1995)28:1-4<137:SSIFBR>2.0.ZU;2-D