CONDUCTANCE MODULATION BY SINGLE-ELECTRON TRAPPING IN SUB-MU-M MOSFETS

Authors
MUELLER HH SCHIRL U SCHULZ M
Citation
Hh. Mueller et al., CONDUCTANCE MODULATION BY SINGLE-ELECTRON TRAPPING IN SUB-MU-M MOSFETS, Microelectronic engineering, 28(1-4), 1995, pp. 163-166
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
28
Issue
1-4
Year of publication
1995
Pages
163 - 166
Database
ISI
SICI code
0167-9317(1995)28:1-4<163:CMBSTI>2.0.ZU;2-J
Abstract
The discrete conductance modulations induced by single-electron trappi ng in sub-mu m MOSFETs frequently exceed 10% of the channel conductanc e and exhibit a large scatter up to two orders of magnitude. It is sho wn by computer modeling that these modulation properties can only be c aused by a spatial non-uniformity of the channel due to fixed oxide ch arges. In this work the effect of fixed interface charge, which also s patially modulates the channel conductivity, is investigated in detail .