ELECTRICAL AND PHYSICOCHEMICAL CHARACTERIZATIONS OF THE SIO2 SIC INTERFACE/

Authors
BILLON T BANO E DICIOCCIO L OUISSE T LASSAGNE P JAUSSAUD C
Citation
T. Billon et al., ELECTRICAL AND PHYSICOCHEMICAL CHARACTERIZATIONS OF THE SIO2 SIC INTERFACE/, Microelectronic engineering, 28(1-4), 1995, pp. 193-196
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
28
Issue
1-4
Year of publication
1995
Pages
193 - 196
Database
ISI
SICI code
0167-9317(1995)28:1-4<193:EAPCOT>2.0.ZU;2-D
Abstract
(6H) SiC MOS structures have been investigated by means of electrical and physicochemical characterizations. Al-doped p-type MOS capacitors still suffer from a large oxide charge. Although slightly better than thermal oxides, LPCVD oxides still exhibit similar properties, therefo re indicating that the disorder is mainly interfacial. AFM studies do not show significant differences between n- and p-type layers. Charact eristics of MOSFET's built on p-type epilayers are also presented.