CHARGE TRAPPING AND INTERFACE STATE GENERATION IN 6H-SIC MOS STRUCTURES

Comparative studies of the oxide charge trapping and interface state g eneration in n-6H-SiC/SiO2 and Si/SiO2 structures were performed using electron/hole photo-injection. The thermal oxide on SiC was found to have a comparable density of electron traps and even lower density of hole traps than that one on Si. In contrast to the Si/SiO2 system, the electron injection in the oxide on 6H-SiC produces a large density of deep acceptor interface states, which are stable in the temperature r ange below 300 degrees C.