CHARACTERIZATION OF ANNEALED OXIDES ON N-TYPE 6H-SIC BY HIGH-FREQUENCY AND LOW-FREQUENCY CV-MEASUREMENTS

Electrical properties of Oxides on GH-SIC are extracted from HFCV and and QSCV measurements from 24 degrees C to 300 degrees C. D-it values calculated by the Terman and the HF-LF method differ in hight and posi tion with respect to the bandgap. However, both methods result in the same relations for different samples. Negative charge trapping in slow interface states and oxide traps is observed during positive bias str ess. The trapping properties of different devices correlate to the ini tial fixed oxide charge densities.