INVESTIGATION OF TRAPS IN THE NSIC-PSI INTERFACE AT CRYOGENIC TEMPERATURES

Authors
LYSENKO VS GOMENIUK YV OSIYUK IN TYAGULSKI IP
Citation
Vs. Lysenko et al., INVESTIGATION OF TRAPS IN THE NSIC-PSI INTERFACE AT CRYOGENIC TEMPERATURES, Microelectronic engineering, 28(1-4), 1995, pp. 205-208
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
28
Issue
1-4
Year of publication
1995
Pages
205 - 208
Database
ISI
SICI code
0167-9317(1995)28:1-4<205:IOTITN>2.0.ZU;2-J
Abstract
A new method for characterisation of SiC-Si interface based on measure ments of thermally stimulated charge release and of thermal dielectric relaxation current in the temperature range from 5 to 30 K is present ed. Activation energies of shallow traps in the transition region of t he SiC-Si interface were found to be the same as in the SiO2-Si interf ace.