Vs. Lysenko et al., INVESTIGATION OF TRAPS IN THE NSIC-PSI INTERFACE AT CRYOGENIC TEMPERATURES, Microelectronic engineering, 28(1-4), 1995, pp. 205-208
A new method for characterisation of SiC-Si interface based on measure
ments of thermally stimulated charge release and of thermal dielectric
relaxation current in the temperature range from 5 to 30 K is present
ed. Activation energies of shallow traps in the transition region of t
he SiC-Si interface were found to be the same as in the SiO2-Si interf
ace.