ALKALI CONTAMINATION OF NATIVE OXIDES GROWN ON 6H AND 3C SILICON-CARBIDE

Authors
RAYNAUD C AUTRAN JL BRIOT JB BALLAND B BILLON T LASSAGNE P
Citation
C. Raynaud et al., ALKALI CONTAMINATION OF NATIVE OXIDES GROWN ON 6H AND 3C SILICON-CARBIDE, Microelectronic engineering, 28(1-4), 1995, pp. 209-212
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
28
Issue
1-4
Year of publication
1995
Pages
209 - 212
Database
ISI
SICI code
0167-9317(1995)28:1-4<209:ACONOG>2.0.ZU;2-1
Abstract
Alkali mobile ion behaviour has been investigated in native oxides, gr own on both 6H and 3C silicon carbide, by Thermally Stimulated Ionic C urrent (TSIC) measurements. We have used a numerical method to determi ne the detrapping energy distributions of Na+ and K+: identified by Se condary Ion Mass Spectrometry (SIMS), at Al/SiO2 and SiO2/SiC interfac es, and studied the dependence of these trap energies as a function of the electric field.