MBE-GROWTH AND CHARACTERIZATION OF CDF2 LAYERS ON SI(111)

Authors
NOVIKOV SV FALEEV NN IZUMI A KHILKO AY SOKOLOV NS SOLOVEV SA TSUTSUI K
Citation
Sv. Novikov et al., MBE-GROWTH AND CHARACTERIZATION OF CDF2 LAYERS ON SI(111), Microelectronic engineering, 28(1-4), 1995, pp. 213-216
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
28
Issue
1-4
Year of publication
1995
Pages
213 - 216
Database
ISI
SICI code
0167-9317(1995)28:1-4<213:MACOCL>2.0.ZU;2-4
Abstract
Epitaxial CdF2 layers and CdF2-CaF2 superlattices have been grown on S i(111) substrates by means of molecular beam epitaxy. Double crystal X -ray diffractometry showed their high structural perfection. X-ray pho toelectron spectroscopy revealed that CdF2 conduction band lies below that of Si by 0.8 eV. It was found from the cathodoluminescence measur ements that Eu3+ ions in epitaxial layer occupy C-4v sites.