PLASMA OXIDATION OF SI AND SIGE

Authors
GOH IS ZHANG JF HALL S ECCLESTON W WERNER K
Citation
Is. Goh et al., PLASMA OXIDATION OF SI AND SIGE, Microelectronic engineering, 28(1-4), 1995, pp. 221-224
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
28
Issue
1-4
Year of publication
1995
Pages
221 - 224
Database
ISI
SICI code
0167-9317(1995)28:1-4<221:POOSAS>2.0.ZU;2-Q
Abstract
This paper reports the latest progress in the oxidation of Si and SiGe by plasma anodisation at a temperature below 150 degrees C. The inter face state density for the SiGe sample is substantially reduced and th e surface inversion is observed. The interfacial stability is tested u nder the biased temperature stress.