STRUCTURAL-ANALYSIS OF THERMALLY OXIDIZED AMORPHOUS SI1-XGEX LAYERS

Authors
BENRAKKAD MS FERRER JC GARRIDO B PEDROVIEJO JJ CALDERER J MORANTE JR
Citation
Ms. Benrakkad et al., STRUCTURAL-ANALYSIS OF THERMALLY OXIDIZED AMORPHOUS SI1-XGEX LAYERS, Microelectronic engineering, 28(1-4), 1995, pp. 225-228
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
28
Issue
1-4
Year of publication
1995
Pages
225 - 228
Database
ISI
SICI code
0167-9317(1995)28:1-4<225:SOTOAS>2.0.ZU;2-Q
Abstract
The study of the oxidation process of amorphous SiGe alloys is reporte d from the microstructural characteristics of the obtained oxides by w et oxidation at 700 degrees C during 30 minutes. The analysis has been carried out by TEM, Raman, FTIR and XPS measurements which reveal tha t the whole layers are partially oxidized, (Si,Ge)O-y, without Ge pile -up. The deduced suboxides concentrations show the preferential silico n oxidation in spite of the simultaneous oxidation of Si and Ge. Likew ise, a comparison with the oxidation of the polycrystalline alloys is performed to stand out the role of the Si and Ge diffusivities,