EFFECT OF THE OXIDATION ON THE POROUS SILICON VOLTAGE TUNABLE LUMINESCENCE

Authors
BSIESY A HORY MA GASPARD F HERINO R LIGEON M MULLER F ROMESTAIN R VIAL JC
Citation
A. Bsiesy et al., EFFECT OF THE OXIDATION ON THE POROUS SILICON VOLTAGE TUNABLE LUMINESCENCE, Microelectronic engineering, 28(1-4), 1995, pp. 233-236
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
28
Issue
1-4
Year of publication
1995
Pages
233 - 236
Database
ISI
SICI code
0167-9317(1995)28:1-4<233:EOTOOT>2.0.ZU;2-M
Abstract
Porous silicon luminescence can be strongly modified by the applicatio n of an external bias (energy-selective quenching of the photoluminesc ence, reversible voltage tuning of the cathodic electroluminescence), as the result of selective carrier injection into the silicon nanocrys tallites of the porous layer. Partial oxidation of the material is sho wn to strongly modify this selectivity and the voltage dependence of t he light emission by changing the voltage drop distribution in the mat erial.