SILICON LUMINESCENCE TECHNIQUES FOR THE CHARACTERIZATION OF HOT-CARRIER AND DEGRADATION PHENOMENA IN MOS DEVICES

Authors
SELMI L
Citation
L. Selmi, SILICON LUMINESCENCE TECHNIQUES FOR THE CHARACTERIZATION OF HOT-CARRIER AND DEGRADATION PHENOMENA IN MOS DEVICES, Microelectronic engineering, 28(1-4), 1995, pp. 249-256
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
28
Issue
1-4
Year of publication
1995
Pages
249 - 256
Database
ISI
SICI code
0167-9317(1995)28:1-4<249:SLTFTC>2.0.ZU;2-7
Abstract
Measurements of hot-carrier induced Light emission represent a valuabl e mean to investigate hot-carrier and degradation phenomena. This pape r reviews research in this held with particular regard to problems sti ll open to investigation, and it discusses results in the characteriza tion of hot carrier and degradation phenomena in MOS transistors.