STUDY OF HOT-CARRIER DEGRADATION IN SUBMICROMETER LDD-NMOSFETS FROM 1F NOISE AND CHARGE-PUMPING CURRENT MEASUREMENTS AT DIFFERENT TEMPERATURE ANNEALS/

The 1/f noise and variable frequency charge pumping current are used t o probe hot-carrier induced oxide and interface traps. A strong correl ation between the noise and charge pumping data is observed, confirmin g carrier capture by near-interface traps as the physical origin of 1/ f noise in MOS transistors. Results also suggest an oxide trap density that decreases with distance from the interface, and increases with e nergy from mid bandgap to the Si conduction band edge.