SPATIAL-DISTRIBUTION OF INTERFACE TRAPS AFTER HOT-CARRIER STRESS FROMFORWARD GIDL MEASUREMENTS

Authors
OKHONIN S HESSLER T DUTOIT M
Citation
S. Okhonin et al., SPATIAL-DISTRIBUTION OF INTERFACE TRAPS AFTER HOT-CARRIER STRESS FROMFORWARD GIDL MEASUREMENTS, Microelectronic engineering, 28(1-4), 1995, pp. 261-264
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
28
Issue
1-4
Year of publication
1995
Pages
261 - 264
Database
ISI
SICI code
0167-9317(1995)28:1-4<261:SOITAH>2.0.ZU;2-A
Abstract
The feasibility of extracting the spatial distribution of interface tr aps from forward gate-induced drain leakage (GIDL) measurements on sub micron MOSFET's is demonstrated. The results of this technique are sim ilar to those of the charge pumping (CP) one. The differences between the two techniques are discussed.