IMPROVED HOT-CARRIER IMMUNITY OF P-MOSFETS WITH 8NM THICK NITRIDED GATE-OXIDE DURING BIDIRECTIONAL STRESSING

The hot-carrier reliability in p(+) poly-gate p-MOSFET's with pure and nitrided 8nm thick gate-oxide is investigated under uniform and local ized electron injections. The effects of bidirectionally DC-(AC) stres sing on the saturated (linear) - mode transistor parameters are monito red as they represent the worst limitating factor in pass transistors for digital logic applications. With a proper RTA condition and nitrid ation ambient, it is found that the gate-oxide process obtained by low -pressure plasma nitridation shows better hot-carrier immunity than pu re oxide with a significant reduction of charge trapping.