2-D SIMULATION OF PMOSFET HOT-CARRIER DEGRADATION

A 2-D device simulation program, featuring a complete set of models to be used for the simulation of MOSFET hot-carrier degradation, is pres ented. It comprises models for hot-carrier oxide injection and oxide t ransport, for oxide trapping mechanisms, and for the description of th e impact of oxide and interface state charge on device operation. The program, originally developed for drain profile engineering, is used h ere as a tool for the investigation on different electron trap mechani sms as discussed in literature recently to explain pMOSFET degradation . For these models, simulated time dependence of stress gate current a nd linear drain current change are compared to experiment. Details on charge accumulation in the gate oxide during stress are presented.