A MODEL STUDY OF THE HOT-CARRIER PROBLEM IN LDD-MOSFETS AND OVERLAPPED LDD-MOSFETS

Authors
HABAS P BELLENS R GROESENEKEN G
Citation
P. Habas et al., A MODEL STUDY OF THE HOT-CARRIER PROBLEM IN LDD-MOSFETS AND OVERLAPPED LDD-MOSFETS, Microelectronic engineering, 28(1-4), 1995, pp. 285-288
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
28
Issue
1-4
Year of publication
1995
Pages
285 - 288
Database
ISI
SICI code
0167-9317(1995)28:1-4<285:AMSOTH>2.0.ZU;2-A
Abstract
The role of the gate overlap and the LDD-implantation concentration in the hot-carrier aging of n-channel LDD and overlapped LDD MOSFETs is extensively studied by means of numerical modeling. The device drive c urrent, the carrier heating and the impact ionization in devices at th e stress bias and the sensitivity of the drain current to the amount a nd the location of the damage are considered. The results provide an u nderstanding of the experimentally obtained reliability behavior of 0. 35 mu m-devices and can be applied to formulate the design rules for t hese devices.