OXIDE AND INTERFACE DEGRADATION AND BREAKDOWN UNDER MEDIUM AND HIGH-FIELD INJECTION CONDITIONS - A CORRELATION STUDY

Citation
R. Degraeve et al., OXIDE AND INTERFACE DEGRADATION AND BREAKDOWN UNDER MEDIUM AND HIGH-FIELD INJECTION CONDITIONS - A CORRELATION STUDY, Microelectronic engineering, 28(1-4), 1995, pp. 313-316
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
ISSN journal
01679317
Volume
28
Issue
1-4
Year of publication
1995
Pages
313 - 316
Database
ISI
SICI code
0167-9317(1995)28:1-4<313:OAIDAB>2.0.ZU;2-N
Abstract
Oxide degradation and breakdown are studied using Substrate Hot Electr on (SHE) and Fowler-Nordheim (FN) injection techniques. It is shown th at the generation of electron traps during stress and breakdown are id entical with both techniques and therefore SHE-injection can be used t o study breakdown mechanisms at medium oxide fields that are not acces sible with FN-injection. Breakdown is found to occur when a critical e lectron trap density is reached. In the high field range, it is shown that this critical trap density corresponds to a critical hole fluence , linking the models based on electron trap generation and on hole flu ence together.