R. Degraeve et al., OXIDE AND INTERFACE DEGRADATION AND BREAKDOWN UNDER MEDIUM AND HIGH-FIELD INJECTION CONDITIONS - A CORRELATION STUDY, Microelectronic engineering, 28(1-4), 1995, pp. 313-316
Oxide degradation and breakdown are studied using Substrate Hot Electr
on (SHE) and Fowler-Nordheim (FN) injection techniques. It is shown th
at the generation of electron traps during stress and breakdown are id
entical with both techniques and therefore SHE-injection can be used t
o study breakdown mechanisms at medium oxide fields that are not acces
sible with FN-injection. Breakdown is found to occur when a critical e
lectron trap density is reached. In the high field range, it is shown
that this critical trap density corresponds to a critical hole fluence
, linking the models based on electron trap generation and on hole flu
ence together.