ELECTRON TRAPPING AND DETRAPPING IN NEAR-INTERFACIAL TRAPS DURING FOWLER-NORDHEIM TUNNELING INJECTION AT 77 K

Authors
LOPEZVILLANUEVA JA CARCELLER JE GAMIZ F BANQUERI J
Citation
Ja. Lopezvillanueva et al., ELECTRON TRAPPING AND DETRAPPING IN NEAR-INTERFACIAL TRAPS DURING FOWLER-NORDHEIM TUNNELING INJECTION AT 77 K, Microelectronic engineering, 28(1-4), 1995, pp. 317-320
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
28
Issue
1-4
Year of publication
1995
Pages
317 - 320
Database
ISI
SICI code
0167-9317(1995)28:1-4<317:ETADIN>2.0.ZU;2-A
Abstract
Results of injection experiments at 77 K, alternated with ascensions t o room temperature are reported. Two trapping behaviours have been ide ntified, with a relationship between them being noted. Both donor and acceptor interface traps have also been observed to be created. Result s can be interpreted with a model based on oxide traps with energies a bove the silicon conduction band.