EFFECT OF (CO)-C-60 IRRADIATION AND FOWLER-NORDHEIM INJECTION ON MOS CAPACITORS WITH THIN PLASMA-NITRIDED GATE OXIDES

Authors
SEIGNEUR F AUTRAN JL PLOSSU C BALLAND B BADOT D STRABONI A
Citation
F. Seigneur et al., EFFECT OF (CO)-C-60 IRRADIATION AND FOWLER-NORDHEIM INJECTION ON MOS CAPACITORS WITH THIN PLASMA-NITRIDED GATE OXIDES, Microelectronic engineering, 28(1-4), 1995, pp. 345-348
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
28
Issue
1-4
Year of publication
1995
Pages
345 - 348
Database
ISI
SICI code
0167-9317(1995)28:1-4<345:EO(IAF>2.0.ZU;2-9
Abstract
We have investigated the generation of interface traps during Co-60 ir radiation and Fowler-Nordheim (FN) injection in MOS structures with th in plasma nitrided gate oxides. By using deep level transient spectros copy and capacitance-voltage measurements, we have studied the impact of nitridation time on the creation of fast and slow states in the sil icon bandgap. After FN injection, electrical relaxation of the interfa ce has been interpreted as the superposition of two mechanisms : an ir reversible physico-chemical time-dependent transformation and a revers ible bias-dependent neutralization