ON THE THRESHOLD VOLTAGE SHIFT AFTER HOT-CARRIER INJECTION IN DEEP-SUBMICRON N-CHANNEL MOSFFTS - A QUASI UNIFORM APPROACH

Authors
PAPADAS C REVIL N GHIBAUDO G VINCENT E
Citation
C. Papadas et al., ON THE THRESHOLD VOLTAGE SHIFT AFTER HOT-CARRIER INJECTION IN DEEP-SUBMICRON N-CHANNEL MOSFFTS - A QUASI UNIFORM APPROACH, Microelectronic engineering, 28(1-4), 1995, pp. 361-364
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
28
Issue
1-4
Year of publication
1995
Pages
361 - 364
Database
ISI
SICI code
0167-9317(1995)28:1-4<361:OTTVSA>2.0.ZU;2-L
Abstract
Threshold voltage Vth instabilities observed in deep submicron n-MOSFE Ts after Hot Carrier Injection (HCl) are analyzed in details. A ''quas i-uniform'' approach for analyzing degradation effects is proposed alo ng with a study of the ''turn-over'' phenomenon. Besides, the experime ntal Vth variation is accurately modeled.