CHARGE-PUMPING IN THIN-FILM TRANSISTORS

Authors
SAKS NS BATRA S MANNING M
Citation
Ns. Saks et al., CHARGE-PUMPING IN THIN-FILM TRANSISTORS, Microelectronic engineering, 28(1-4), 1995, pp. 379-382
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
28
Issue
1-4
Year of publication
1995
Pages
379 - 382
Database
ISI
SICI code
0167-9317(1995)28:1-4<379:CITT>2.0.ZU;2-8
Abstract
Charge pumping (CP) has been used to study defects in p-channel poly-c rystalline silicon thin film transistors (TFTs). At high frequencies ( > similar to 1 kHz), we observe anomalous CP behavior in TFTs due to ( a) the high resistivity of, and/or slow electron trapping in, the poly -Si channel and (b) the existence of a TFT drain offset region. At low frequencies, the CP technique still appears to provide a useful measu re of the TFT grain boundary defect density.