LOW DEFECT PLANAR SOI ISLANDS ADJACENT TO SELECTIVE EPITAXIAL-GROWTH (SEG)

Authors
KESSLER J NEUDECK GW GLENN JL
Citation
J. Kessler et al., LOW DEFECT PLANAR SOI ISLANDS ADJACENT TO SELECTIVE EPITAXIAL-GROWTH (SEG), Microelectronic engineering, 28(1-4), 1995, pp. 435-438
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
28
Issue
1-4
Year of publication
1995
Pages
435 - 438
Database
ISI
SICI code
0167-9317(1995)28:1-4<435:LDPSIA>2.0.ZU;2-P
Abstract
The defect density of planar silicon on insulator (SOI) islands fabric ated by epitaxial lateral overgrowth (ELO) are given. While the effect s of the annealing on the defect density were mixed, low defect densit y SOI can be grown by this method where 96% of the islands were defect free. With better process procedures the defect density can be lower than the reported 1x10(3)/cm(2).