OPTICAL CHARACTERIZATION OF DOPED SIMOX STRUCTURES USING FTIR SPECTROSCOPY

The applicability of FTIR Spectroscopy to the non destructive structur al and electrical characterization of doped SIMOX structures is demons trated. The analysis of the infrared reflectivity spectra yields the r efractive index, the free carrier density, the chemical composition an d crystal quality variation depth profiles. The activation of the As d opant atoms and the mobility of the free carriers are also determined. The results are compared to SR and RBS/Channeling measurements. All t echniques confirm that improper selection of the doping conditions may result in a totally amorphized Si overlayer, making it impossible for the radiation damage to be removed during annealing and to obtain goo d crystal quality with high mobility and high electrical activity.