OPTIMIZATION OF SILICA DEPOSITION BY SPUTTERING IN THE SILICON THIN-FILM TRANSISTORS REALIZATION IN LOW-TEMPERATURE TECHNOLOGY

This paper gives some optical and electrical characteristics of silico n dioxide thin films obtained by magnetron sputtering. The aim of thes e films is to serve as gate insulator of MOS transistors with poly-Si active semiconductor. As-deposited thin films with properties close to the ones obtained by other methods, including thermal oxidation, howe ver, present, in some cases, important leakage currents, which can be reduced by annealing.