DECREASE OF THE LATERAL DISTRIBUTION OF INTERSTITIALS IN SILICON-ON-INSULATOR STRUCTURES

In this work we present a series of experimental results performed in Silicon-On-Insulator material, where Oxidation Stacking Faults are use d to monitor the silicon interstitial distribution after an oxidation process. These results demonstrate that the lateral distribution of th ese point defects show an important decrease as compared with bulk sil icon. This decrease mostly depends on the thickness of the Si overlaye r. Comparison with simulation reveals fundamental properties of Si int erstitials.