CHARACTERIZATION OF SOI BY CAPACITANCE AND CURRENT MEASUREMENTS WITH COMBINED GATED DIODE AND DEPLETION-MODE MOSFET STRUCTURE

Citation
Te. Rudenko et al., CHARACTERIZATION OF SOI BY CAPACITANCE AND CURRENT MEASUREMENTS WITH COMBINED GATED DIODE AND DEPLETION-MODE MOSFET STRUCTURE, Microelectronic engineering, 28(1-4), 1995, pp. 475-478
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
ISSN journal
01679317
Volume
28
Issue
1-4
Year of publication
1995
Pages
475 - 478
Database
ISI
SICI code
0167-9317(1995)28:1-4<475:COSBCA>2.0.ZU;2-6