CHARACTERIZATION OF SOI BY CAPACITANCE AND CURRENT MEASUREMENTS WITH COMBINED GATED DIODE AND DEPLETION-MODE MOSFET STRUCTURE

Authors
RUDENKO TE RUDENKO AN NAZAROV AN LYSENKO VS
Citation
Te. Rudenko et al., CHARACTERIZATION OF SOI BY CAPACITANCE AND CURRENT MEASUREMENTS WITH COMBINED GATED DIODE AND DEPLETION-MODE MOSFET STRUCTURE, Microelectronic engineering, 28(1-4), 1995, pp. 475-478
Citations number
NO
Categorie Soggetti
Optics,"Physics, Applied","Engineering, Eletrical & Electronic
Journal title
Microelectronic engineering → ACNP
ISSN journal
01679317
Volume
28
Issue
1-4
Year of publication
1995
Pages
475 - 478
Database
ISI
SICI code
0167-9317(1995)28:1-4<475:COSBCA>2.0.ZU;2-6