L. Calcagnile et al., RECOMBINATION MECHANISMS IN PHOTOPUMPED ZN1-XCDXSE ZNSE MULTIPLE-QUANTUM-WELL LASERS/, Journal of crystal growth, 150(1-4), 1995, pp. 712-717
We investigated exciton stability and the recombination mechanism resp
onsible for lasing in Zn1-xCdxSe/ZnSe multiple quantum well structures
grown by molecular beam epitaxy. We used photocurrent measurements as
a function of sample composition and temperature to gauge exciton sta
bility, and photoluminescence and magne tophotoluminescence spectrosco
py to identify the recombination channels associated with stimulated e
mission. For relatively shallow quantum wells (x similar to 0.10), the
spontaneous emission line shifts diamagnetically with the magnetic fi
eld as expected for exciton-related transitions. On the contrary, the
stimulated emission exhibits a linear shift with the magnetic field wh
ich is consistent with free-carrier recombination from Landau levels.