RECOMBINATION MECHANISMS IN PHOTOPUMPED ZN1-XCDXSE ZNSE MULTIPLE-QUANTUM-WELL LASERS/

Citation
L. Calcagnile et al., RECOMBINATION MECHANISMS IN PHOTOPUMPED ZN1-XCDXSE ZNSE MULTIPLE-QUANTUM-WELL LASERS/, Journal of crystal growth, 150(1-4), 1995, pp. 712-717
Citations number
23
Categorie Soggetti
Crystallography
Journal title
ISSN journal
00220248
Volume
150
Issue
1-4
Year of publication
1995
Part
2
Pages
712 - 717
Database
ISI
SICI code
0022-0248(1995)150:1-4<712:RMIPZZ>2.0.ZU;2-W
Abstract
We investigated exciton stability and the recombination mechanism resp onsible for lasing in Zn1-xCdxSe/ZnSe multiple quantum well structures grown by molecular beam epitaxy. We used photocurrent measurements as a function of sample composition and temperature to gauge exciton sta bility, and photoluminescence and magne tophotoluminescence spectrosco py to identify the recombination channels associated with stimulated e mission. For relatively shallow quantum wells (x similar to 0.10), the spontaneous emission line shifts diamagnetically with the magnetic fi eld as expected for exciton-related transitions. On the contrary, the stimulated emission exhibits a linear shift with the magnetic field wh ich is consistent with free-carrier recombination from Landau levels.