METALORGANIC MOLECULAR-BEAM EPITAXY GROWTH OF ZNSE WITH NEW ZN AND SEPRECURSORS WITHOUT PRECRACKING

We report the first successful precracking-free metalorganic molecular beam epitaxy of ZnSe on GaAs (001) substrates. New precursors are dii sopropyl zinc (DiPZn), Zn(i-C3H7)(2) for Zn, and ditertiarybutyl selen ide (DtBSe), Se(t-C4H9)(2) for Se. It is found that these precursors d ecomposed at low temperatures, such as 100 degrees C for DiPZn and 150 degrees C for DtBSe. This decomposition of the precursors at low temp eratures allows us to grow ZnSe on GaAs substrates without precracking . Growth rate is the largest at substrate temperature of 350 degrees C and VI/II ratio of 12. Under these conditions, the growth rate increa ses up to 0.6 mu m/h.