DEPENDENCE OF THE STRUCTURAL-PROPERTIES OF ZNSE ON GAAS SUBSTRATE ORIENTATION

Authors
PARBROOK PJ ISHIKAWA M NISHIKAWA Y SAITO S ONOMURA M HATAKOSHI G
Citation
Pj. Parbrook et al., DEPENDENCE OF THE STRUCTURAL-PROPERTIES OF ZNSE ON GAAS SUBSTRATE ORIENTATION, Journal of crystal growth, 150(1-4), 1995, pp. 749-754
Citations number
12
Categorie Soggetti
Crystallography
Journal title
Journal of crystal growth → ACNP
ISSN journal
00220248
Volume
150
Issue
1-4
Year of publication
1995
Part
2
Pages
749 - 754
Database
ISI
SICI code
0022-0248(1995)150:1-4<749:DOTSOZ>2.0.ZU;2-F
Abstract
The structural properties of undoped and nitrogen-doped ZnSe grown on (001) substrates and substrates cut at 15 degrees from the (001) plane towards the [110] direction are compared. In the case of layers grown on the 15 degrees off substrates, a marked improvement in the structu ral quality of the layers is observed for layers doped p-type using N.