MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF ZNSTE EPILAYERS AND ZNSTE ZNSE SUPERLATTICES ON SI SUBSTRATES/

ZnS1-xTex/ZnSe superlattices with x = 0.02 and 0.07 have been grown us ing the molecular beam epitaxy (MBE) technique. Room temperature photo luminescence from ZnSo(0.98)Te(0.02)/ZnSe superlattices is dominanted by strong recombination radiation from ZnSe wells. Under high photoexc itation intensity, room temperature stimulated emission from this supe rlattice has been observed. In contrast, ZnS0.93Te0.07/ZnSe superlatti ces only exhibits a weak, broad luminescence band that is characterist ic of isoelectronic centers. These observed results can be attributed to the difference in the energies of hole traps in the barrier layers of these supprlattices.